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| SHINDENGEN VR Series Power MOSFET N-Channel Enhancement type 2SK1194 ( F05E23 ) 230V 0.5A FEATURES *oe Applicable to 4V drive. *oe static Rds(on) is small. The *oe Built-in ZD for Gate Protection. APPLICATION *oe DC/DC converters *oe Power supplies of DC 12-24V input *oe Product related to Integrated Service Digital Network OUTLINE DIMENSIONS Case : E-pack (Unit : mm) RATINGS *oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current* DC*j i ID Continuous Drain Current* Peak) i IDP Continuous Source Current* DC*j i IS Total Power Dissipation PT Conditions Ratings -55*150 150 230 *}20 0.5 1 0.5 6 Unit *Z V A W Copyright & Copy;1999 Shindengen Electric Mfg.Co.Ltd VR Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbole V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranconductance Static Drain-Source On-tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions ID = 250A, VGS = 0V VDS = 230V, VGS = 0V VGS = 20V, VDS = 0V ID = 0.5A, VDS = 10V ID = 0.5A, VGS = 10V ID = 0.2mA, VDS = 10V IS = 0.5A, VGS = 0V junction to case VGS = 10V, ID = 0.5A, VDD = 200V VDS = 10V, VGS = 0V, f = 1MHZ ID = 0.5A, VGS = 10V, RL = 200 2SK1194 ( F05E23 ) Min. 230 Typ. Max. 250 0.1 0.2 2 0.4 5.5 3 Unit V A S V 2.7 45 4.5 30 30 50 8 4 1.5 20.8 / nC pF 60 100 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK1194 1 Transfer Characteristics 0.8 Tc = -55C Drain Current ID [A] 25C 0.6 100C 150C 0.4 0.2 VDS = 10V pulse test TYP 0 2 4 6 8 10 0 Gate-Source Voltage VGS [V] 2SK1194 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 10 ID = 0.5A 1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK1194 5 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 0.2mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK1194 1 Safe Operating Area 100s Drain Current ID [A] R DS(ON) limit 0.1 200s 1ms 10ms DC Tc = 25C Single Pulse 0.01 1 10 100 230 Drain-Source Voltage VDS [V] 2SK1194 Transient Thermal Impedance 100 Transient Thermal Impedance jc(t) [C/W] 10 1 10-4 10-3 10-2 10-1 100 Time t [s] 2SK1194 1000 Capacitance Capacitance Ciss Coss Crss [pF] 100 Ciss Coss 10 Tc=25C TYP 1 0 50 Crss 100 150 200 Drain-Source Voltage VDS [V] 2SK1194 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK1194 250 Gate Charge Characteristics 20 Drain-Source Voltage VDS [V] 15 VDD = 200V 100V 150 VDS VGS 100 10 5 50 ID = 0.5A 0 0 1 2 3 4 5 0 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 200 |
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